A memristor crossbar array consists of horizontal word lines (WL) and vertical bit lines (BL) with memristors at each intersection. Each memristor can store information by changing its resistance state when voltage is applied.
Memory Operation
Writing: To write data, select a word line and bit line, then apply a voltage. Positive voltage typically decreases resistance (SET operation), while negative voltage increases resistance (RESET operation).
Reading: Apply a small voltage and measure the current. High current indicates low resistance (logic '1'), while low current indicates high resistance (logic '0').
Key Advantages
High density storage - memristors can be scaled to very small sizes
Non-volatile - data persists without power
Fast switching speeds
Low power consumption
Analog computing capabilities
Sneak Path Problem
In large arrays, current can flow through unintended paths (sneak paths) through neighboring memristors. This is mitigated using: